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| MITSUBISHI SEMICONDUTOR PRELIMINARY MGF1951 MGF1951A Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES * High Gain and High Output Power GLP=9dB, P1dB=13dBm (typ) @ f=12GHz * Leadless Ceramic Package APPLICATION S- to Ku-Band Driver Amplifiers and Oscillators QUALITY General Grade ORDERING INFORMATION Part Number MGF1951A-01 Quantity 3.000 pcs/reel Supply Form Tape & Reel Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measure such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. ABSOLUTE MAXIMUM RATINGS (Ta=+25C) Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to Drain Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Rating -8 -8 120 300 125 -65 to +125 Unit V V mA mW C C ELECTRICAL CHARACTERISTICS (Ta=+25C) Symbol IDSS VGS(off) P1dB GLP Parameter Saturated Drain Current Gate to Source Cut-off Voltage Output Power at 1dB Gain Compression Linear Power Gain Test Conditions IG=-30A VDS=3V, VGS=0V VDS=3V, ID=300A VDS=3V, ID=30mA, f=12GHz VDS=3V, ID=30mA, Pin=-5dBm, f=12GHz MIN -8 35 -0.3 11 7 TYP -15 60 -1.4 13 9 MAX -- 120 -3.5 -- -- Unit V mA V dBm dB V(BR)GDO Gate to Drain Breakdown Voltage MITSUBISHI (1/4) 1 Aug 2002 MITSUBISHI SEMICONDUTOR PRELIMINARY MGF1951 MGF1951A Medium Power Microwave MESFET OUTLINE DRAWING (mm) Top Side Bottom 0) .2 (2 5 .0 20 2 1. y 2.15 +0.2 -0.1 x x 2-R0.275 2(1 2.15 +0.2 -0.1 View A .0 2) 0.20 0.1 0.80 0.1 z y x (0.30) (2.30) x Gate (round shape) y Source z Drain (square shape) View A MITSUBISHI (2/4) 1 Aug 2002 40. 55 z C2 4AA x y y y 0 .0 5 2-R0.20 y z 20. 5 0 .0 5 MITSUBISHI SEMICONDUTOR PRELIMINARY MGF1951 MGF1951A Medium Power Microwave MESFET TYPICAL CHARACTERISTICS (Ta=+25C) DRAIN CURRENT vs DRAIN VOLTAGE 80 70 VGS=0V 80 VDS=3V 70 DRAIN CURRENT vs GATE VOLTAGE Drain Current ID (mA) Drain Current ID (mA) 60 50 40 30 20 10 0 0 1 2 3 4 -0.2V/step 60 50 40 30 20 10 0 -2.0 -1.5 -1.0 -0.5 0 Drain to Source Voltage VDS (V) OUTPUT POWER vs INPUT POWER 20 Gate to Source Voltage VGS (V) Output Power Pout (dBm) VDS=3V ID=30mA f=12GHz 15 10 5 0 -10 -5 0 5 10 Input Power Pin (dBm) MITSUBISHI (3/4) 1 Aug 2002 MITSUBISHI SEMICONDUTOR PRELIMINARY MGF1951 MGF1951A Medium Power Microwave MESFET S PARAMETERS (VDS=3V, ID=30mA, Ta=+25C) f (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag 0.984 0.946 0.906 0.857 0.811 0.771 0.736 0.710 0.679 0.645 0.594 0.549 0.508 0.481 0.472 0.508 0.573 0.646 Ang -17.7 -38.6 -52.5 -71.1 -85.3 -97.4 -109.8 -121.6 -133.6 -146.3 -159.8 -175.7 165.8 142.3 116.9 92.7 70.4 52.2 Mag 4.239 4.103 3.914 3.710 3.445 3.197 2.984 2.847 2.737 2.659 2.600 2.570 2.532 2.480 2.378 2.289 2.160 1.975 S21 Ang 163.2 144.3 131.2 115.9 103.3 92.5 81.7 70.7 60.4 50.1 39.5 28.4 16.2 2.5 -10.9 -23.8 -37.5 -51.6 Mag 0.016 0.031 0.043 0.054 0.061 0.065 0.069 0.071 0.075 0.083 0.089 0.091 0.095 0.100 0.101 0.103 0.105 0.103 S12 Ang 78.2 64.3 54.3 44.2 35.6 29.6 23.7 19.0 15.1 11.3 2.6 -2.7 -9.0 -18.0 -26.7 -34.7 -42.9 -50.4 Mag 0.581 0.565 0.548 0.518 0.509 0.500 0.502 0.507 0.509 0.513 0.496 0.472 0.443 0.399 0.342 0.279 0.211 0.135 S22 Ang -11.3 -26.2 -34.3 -45.5 -54.9 -61.4 -66.9 -72.1 -75.9 -79.6 -84.2 -87.2 -91.4 -96.7 -101.7 -107.6 -112.1 -115.3 K 0.18 0.32 0.43 0.53 0.64 0.76 0.86 0.93 0.99 0.99 1.09 1.19 1.27 1.34 1.45 1.47 1.44 1.44 MAG/MSG (dB) 24.3 21.3 19.6 18.4 17.5 16.9 16.4 16.0 15.6 15.1 12.8 11.9 11.1 10.5 9.7 9.4 9.2 8.9 Gate Source Source S-Parameter Reference Planes Drain MITSUBISHI (4/4) 1 Aug 2002 |
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